Features
• Radiation hardened silicon diode
• Active dimension of 0.8 x 0.8mm
• 32 nC/Gy sensitivity

The Flat QED utilizes a radiation hardened n-type silicon on junction diode. The QED uses a flat piece of buildup that sits directly atop the junction diode.

QED detectors offer three different buildup configurations (just as the ISORAD) for each of the low, medium and high photon energy ranges. The electron QED detector is suitable for all electron energies. There is also a skin (scatter) QED detector which has no buildup. The QED is ideal for treatments where diode placement is relatively normal to the beam. 

Clinical Characteristics:

Superior Radiation Resistance - The radiation degradation rate is 1.5% per kGy at 10 MeV and < 0.5% per kGy at 6 MV.

Minimized Instantaneous Dose Rate Dependence - Normalized to 100cm SSD, the diode response variation is less than ± 1.5% for both 6 and 18 MV beams from 80 cm to 130 cm.

Reproducible - QED reproducibility error is less than 0.5% for measurements > 1cGy.

Specifications

Cable Diameter: 2.5 mm
Cable Length: 3 M
Cable Connector: Lemo

Specifications

Silicon Diode : n-type
Effective Detection Dimensions: 0.8 mm x 0.8 mm
Sensitivity: 32 nC/Gy
Sensitivity Degradation Rate: 2%/kGy at 10 MeV
Impendance at 10 mV Reverse Bias: >200 Mohm
Cable Diameter: 2.5 mm
Cable Length: 3 M
Cable Connector: Lemo